About
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Electron beam lithography (EBL) is a specialized technique of a lithographic processes for preparing and creating the extremely fine patterns on semiconductor substrates from hundreds micrometers to ten nanometers. It´s useful tool required by the modern electronics industry for integrated circuits, sensors, microsystems and nanotechnology. During the past 40 years from 60s we have witnessed an exciting evolution of this technology in the world.
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The origin of EBL in Slovak republic and science base of research was from 1980 Department of Electron beam lithography (Dept. of EBL) on Slovak Academy of Science (SAS). The main activity of Dept. of EBL is research and development of progressive lithography methods aplicable in research of new microelectronic and nanoelectronic. Our research team has a long-time practical skills in electron beam lithography, electron microscopy and thin film deposition including complex self-coordination and self-maintenance of instrumentation, for example older electron beam lithograph ZBA10 was in operation from 1980. Our scientific knowledge is continuously published in multiple publications. |
Electron beam exposure system is one of primary devices, that is necessary for progress of research, investigation and development in the sphere of microtechnology and nanotechnology. This apparature has a wide spectrum of exploitation in applications where electron beam lithography is fundamental of technological processes. At the present time applications we can find in physics, chemistry, optics, biology, microsystems (MEMS, MOEMS, NEMS), biomedical engineering and development of new material. Also, applicability of electron beam lithography has exercise in nanotechnology. The newer model of electron beam pattern generator from „ZBA“ set – ZBA21S was installed here in 2002 and modernized by PC control and management system based on Osprey processor. From november of 2004 ZBA21S is operating and is used for solving research problems for associated organizations. |
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